IRFD110
| Part No | IRFD110 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 1A 4-DIP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15732
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.513 | |
| 10 | 0.5027 | |
| 100 | 0.4874 | |
| 1000 | 0.472 | |
| 10000 | 0.4514 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Through Hole |
| Fall Time | 16 ns |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Rise Time | 16 ns |
| Rds On Max | 540 mΩ |
| Resistance | 540 mΩ |
| Case/Package | DIP |
| Current Rating | 1 A |
| Number of Pins | 4 |
| Contact Plating | Lead, Tin |
| Input Capacitance | 180 pF |
| Power Dissipation | 1.3 W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.9 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15 ns |
| Voltage Rating (DC) | 100 V |
| Max Power Dissipation | 1.3 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 540 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
