SI1013CX-T1-GE3
| Part No | SI1013CX-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 0.45A SC89-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
17008
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.376 | |
| 10 | 0.3685 | |
| 100 | 0.3572 | |
| 1000 | 0.3459 | |
| 10000 | 0.3309 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 5 ns |
| Packaging | Tape & Reel (TR) |
| Rise Time | 8 ns |
| Rds On Max | 760 mΩ |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Case/Package | SOT-563-3 |
| Number of Pins | 3 |
| Input Capacitance | 45 pF |
| Power Dissipation | 190 mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9 ns |
| Max Power Dissipation | 190 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 630 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 450 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
