SI1416EDH-T1-GE3
| Part No | SI1416EDH-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 3.9A SOT-363 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
20407
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.459 | |
| 10 | 0.4498 | |
| 100 | 0.436 | |
| 1000 | 0.4223 | |
| 10000 | 0.4039 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.35 mm |
| Height | 1 mm |
| Length | 2.2 mm |
| Weight | 28.009329 mg |
| Fall Time | 45 ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rise Time | 60 ns |
| Rds On Max | 58 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOT-363 |
| Number of Pins | 6 |
| Power Dissipation | 1.56 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.5 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 47 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 3.9 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
