SI2305CDS-T1-GE3
| Part No | SI2305CDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 8V 5.8A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
39177
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4004 | |
| 10 | 0.3924 | |
| 100 | 0.3804 | |
| 1000 | 0.3684 | |
| 10000 | 0.3524 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Current | 58 A |
| Voltage | 8 V |
| Fall Time | 20 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 20 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 50 mΩ |
| Resistance | 35 mΩ |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Input Capacitance | 715 pF |
| Power Dissipation | 960 mW |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 960 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 28 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | -4.4 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -8 V |
| Drain to Source Breakdown Voltage | -8 V |
