SI2319DS-T1-E3
| Part No | SI2319DS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 2.3A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
49701
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.576 | |
| 10 | 0.5645 | |
| 100 | 0.5472 | |
| 1000 | 0.5299 | |
| 10000 | 0.5069 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Current | 3 A |
| Voltage | 40 V |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 15 ns |
| REACH SVHC | Unknown |
| Rds On Max | 82 mΩ |
| Resistance | 82 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | -3 V |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Input Capacitance | 470 pF |
| Power Dissipation | 750 mW |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Max Power Dissipation | 750 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 82 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -2.3 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -40 V |
| Drain to Source Breakdown Voltage | -40 V |
