SI4401BDY-T1-GE3
| Part No | SI4401BDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 8.7A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18106
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5147 | |
| 10 | 1.4844 | |
| 100 | 1.439 | |
| 1000 | 1.3935 | |
| 10000 | 1.3329 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Rise Time | 15 ns |
| REACH SVHC | Unknown |
| Rds On Max | 14 mΩ |
| Resistance | 14 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Power Dissipation | 1.5 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 97 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 11 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -8.7 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -40 V |
| Drain to Source Breakdown Voltage | -40 V |
