SI4447ADY-T1-GE3
| Part No | SI4447ADY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 7.2A 8SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18733
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5757 | |
| 10 | 0.5642 | |
| 100 | 0.5469 | |
| 1000 | 0.5296 | |
| 10000 | 0.5066 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.75 mm |
| Weight | 506.605978 mg |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 12 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 45 mΩ |
| Schedule B | 8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 970 pF |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -1.2 V |
| Number of Channels | 1 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Max Power Dissipation | 4.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 36 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -5.5 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -40 V |
| Drain to Source Breakdown Voltage | -40 V |
