SI4842BDY-T1-E3
| Part No | SI4842BDY-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 28A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
20319
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4752 | |
| 10 | 2.4257 | |
| 100 | 2.3514 | |
| 1000 | 2.2772 | |
| 10000 | 2.1782 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 13 ns |
| Lead Free | Lead Free |
| Rise Time | 190 ns |
| REACH SVHC | Unknown |
| Rds On Max | 4.2 mΩ |
| Resistance | 4.2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1.4 V |
| Case/Package | SO |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 3.65 nF |
| Power Dissipation | 6.25 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 125 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Max Power Dissipation | 6.25 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.2 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 28 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
