SI4896DY-T1-E3
| Part No | SI4896DY-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 80V 6.7A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
17329
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7952 | |
| 10 | 1.7593 | |
| 100 | 1.7054 | |
| 1000 | 1.6516 | |
| 10000 | 1.5798 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 506.605978 mg |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 11 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 16.5 mΩ |
| Resistance | 16.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 2 V |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Power Dissipation | 1.56 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.56 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 16.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 9.5 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drain to Source Breakdown Voltage | 80 V |
