SI7149DP-T1-GE3
| Part No | SI7149DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 50A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
31981
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6872 | |
| 10 | 1.6535 | |
| 100 | 1.6028 | |
| 1000 | 1.5522 | |
| 10000 | 1.4847 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 6.15 mm |
| Height | 1.04 mm |
| Length | 5.15 mm |
| Fall Time | 110 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 150 ns |
| REACH SVHC | Unknown |
| Rds On Max | 5.2 mΩ |
| Resistance | 5.2 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SO |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 4.59 nF |
| Power Dissipation | 5.2 W |
| Threshold Voltage | -1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 100 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 230 ns |
| Max Power Dissipation | 69 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 5.2 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Continuous Drain Current (ID) | 23.7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | -20 V |
