SI7315DN-T1-GE3
| Part No | SI7315DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 150V 8.9A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16283
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3068 | |
| 10 | 1.2807 | |
| 100 | 1.2415 | |
| 1000 | 1.2023 | |
| 10000 | 1.15 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 8 ns |
| Packaging | Digi-Reel® |
| Rise Time | 9 ns |
| REACH SVHC | Unknown |
| Rds On Max | 315 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 880 pF |
| Power Dissipation | 3.8 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 23 ns |
| Max Power Dissipation | 52 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 262 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Continuous Drain Current (ID) | -8.9 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -150 V |
| Drain to Source Breakdown Voltage | -150 V |
