SI7716ADN-T1-GE3
| Part No | SI7716ADN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 16A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
34565
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1564 | |
| 10 | 1.1333 | |
| 100 | 1.0986 | |
| 1000 | 1.0639 | |
| 10000 | 1.0176 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 12 ns |
| REACH SVHC | Unknown |
| Rds On Max | 13.5 mΩ |
| Resistance | 13.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 846 pF |
| Power Dissipation | 3.5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13 ns |
| Max Power Dissipation | 27.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 10.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 16 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
