SIR468DP-T1-GE3
RoHS

SIR468DP-T1-GE3

SIR468DP-T1-GE3

Vishay

MOSFET N-CH 30V 40A PPAK SO-8

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SIR468DP-T1-GE3

Spot quantity: 45562
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCUnknown
Rds On Max5.7 mΩ
Resistance5.7 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance1.72 nF
Power Dissipation5 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Max Power Dissipation50 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V