SIS890DN-T1-GE3
| Part No | SIS890DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 30A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19006
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.107 | |
| 10 | 1.0849 | |
| 100 | 1.0516 | |
| 1000 | 1.0184 | |
| 10000 | 0.9742 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.4 mm |
| Height | 1.12 mm |
| Length | 3.4 mm |
| Fall Time | 8 ns |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| Rise Time | 10 ns |
| REACH SVHC | Unknown |
| Rds On Max | 23.5 mΩ |
| Resistance | 23.5 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 802 pF |
| Power Dissipation | 3.7 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16 ns |
| Max Power Dissipation | 52 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 19.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8.8 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
