SQJ469EP-T1_GE3
| Part No | SQJ469EP-T1_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 80V 32A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16601
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.94 | |
| 10 | 2.8812 | |
| 100 | 2.793 | |
| 1000 | 2.7048 | |
| 10000 | 2.5872 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.267 mm |
| Weight | 506.605978 mg |
| Fall Time | 40 ns |
| Rise Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 25 mΩ |
| Nominal Vgs | -2 V |
| Number of Pins | 8 |
| Input Capacitance | 5.1 nF |
| Power Dissipation | 100 W |
| Threshold Voltage | -2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150 ns |
| Element Configuration | Single |
| Max Power Dissipation | 100 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 25 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -32 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | -80 V |
| Drain to Source Breakdown Voltage | -80 V |
