IXTQ200N10T
| Part No | IXTQ200N10T |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 100V 200A TO3P |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16215
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9024 | |
| 10 | 6.7644 | |
| 100 | 6.5573 | |
| 1000 | 6.3502 | |
| 10000 | 6.0741 |
Products Specifications
| Package | Tube |
|---|---|
| Series | Trench |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 200A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 5.5mOhm @ 50A, 10V |
| RdsOn(Max)@Id | 4.5V @ 250µA |
| Vgs | 152 nC @ 10 V |
| Vgs(th)(Max)@Id | ±30V |
| Vgs(Max) | 9400 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 550W (Tc) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
| OperatingTemperature | - |
| MountingType | - |
| SupplierDevicePackage | Through Hole |
| Package/Case | TO-3P |
| GateCharge(Qg)(Max)@Vgs | TO-3P-3, SC-65-3 |
| Grade | |
| Qualification |
