IPD053N08N3GATMA1
| Part No | IPD053N08N3GATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 80V 90A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15332
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0444 | |
| 10 | 2.9835 | |
| 100 | 2.8922 | |
| 1000 | 2.8008 | |
| 10000 | 2.6791 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 10 ns |
| Lead Free | Contains Lead |
| Packaging | Tape & Reel |
| Rise Time | 66 ns |
| Rds On Max | 5.3 mΩ |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-252-3 |
| Halogen Free | Halogen Free |
| Number of Pins | 3 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 2500 |
| Input Capacitance | 3.57 nF |
| Power Dissipation | 150 W |
| Turn-On Delay Time | 18 ns |
| On-State Resistance | 5.3 mΩ |
| Turn-Off Delay Time | 38 ns |
| Max Power Dissipation | 150 W |
| Max Dual Supply Voltage | 80 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.4 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 90 A |
| Drain to Source Voltage (Vdss) | 80 V |
