IRFB4710PBF
| Part No | IRFB4710PBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 75A TO220AB |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
27487
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2987 | |
| 10 | 1.2727 | |
| 100 | 1.2337 | |
| 1000 | 1.1948 | |
| 10000 | 1.1428 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Through Hole |
| Height | 8.77 mm |
| Fall Time | 38 ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rise Time | 130 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 14 mΩ |
| Resistance | 14 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 5.5 V |
| Termination | Through Hole |
| Case/Package | TO-220AB |
| Recovery Time | 110 ns |
| Current Rating | 75 A |
| Number of Pins | 3 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 1000 |
| Input Capacitance | 6.16 nF |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35 ns |
| Dual Supply Voltage | 100 V |
| On-State Resistance | 14 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41 ns |
| Voltage Rating (DC) | 100 V |
| Element Configuration | Single |
| Max Power Dissipation | 3.8 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 14 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 75 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
