IRFHM830TRPBF
| Part No | IRFHM830TRPBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 30V 21A/40A PQFN |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
26348
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.918 | |
| 10 | 0.8996 | |
| 100 | 0.8721 | |
| 1000 | 0.8446 | |
| 10000 | 0.8078 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.3 mm |
| Height | 1 mm |
| Length | 3.3 mm |
| Fall Time | 9.2 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 25 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 3.8 mΩ |
| Resistance | 6 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1.8 V |
| Case/Package | VQFN |
| Number of Pins | 8 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 4000 |
| Input Capacitance | 2.155 nF |
| Power Dissipation | 2.7 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12 ns |
| On-State Resistance | 3.8 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13 ns |
| Max Power Dissipation | 2.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 21 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
