IRLR3636TRPBF
| Part No | IRLR3636TRPBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 60V 50A DPAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
49818
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6821 | |
| 10 | 1.6485 | |
| 100 | 1.598 | |
| 1000 | 1.5475 | |
| 10000 | 1.4802 |
Products Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 6.22 mm |
| Height | 2.2606 mm |
| Length | 6.7056 mm |
| Current | 50 A |
| Voltage | 60 V |
| Fall Time | 69 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 216 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 6.8 mΩ |
| Resistance | 6.8 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | DPAK |
| Number of Pins | 3 |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Package Quantity | 2000 |
| Input Capacitance | 3.779 nF |
| Power Dissipation | 143 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 45 ns |
| On-State Resistance | 6.8 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Max Power Dissipation | 143 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.8 mΩ |
| Gate to Source Voltage (Vgs) | 16 V |
| Continuous Drain Current (ID) | 99 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
